Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

In this paper, we study the hydrogen-like donor-impurity binding energy of ground-state change as a function well width under effect temperature, size, and impurity position. Within framework effective mass approximation, Schrodinger-Poisson equation has been solved taken account an on-center in double QWs with rectangular finite confinement potential profile for 10% indium concentration (well region). The eigenvalues their correspondent eigenvectors have obtained by fined element method (FEM). results are good agreement literature show that position significant impact on symmetric coupled quantum wells based non-polar wurtzite (In,Ga) N/GaN core/Shell.